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Doping of chalcopyrites by hydrogen

Identifieur interne : 00BF97 ( Main/Repository ); précédent : 00BF96; suivant : 00BF98

Doping of chalcopyrites by hydrogen

Auteurs : RBID : Pascal:03-0359667

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English descriptors

Abstract

First-principles total-energy calculations for hydrogen impurities in CuInSe2 (CIS) and CuGaSe2 (CGS) show that H+ takes up the Cu-Se bond center position, whereas H0 and H- take up tetrahedral interstitial site next to In (in CIS) or Ga (in CGS). Hydrogen creates a negative-U center (i.e., H0 is never stable), with a (+/-) transition level at Ec-0.39 eV in CIS, and Ec-0.57 eV in CGS. However, once combined with the 2VCu-+IIICu2+ complex, hydrogen forms shallower centers with transition levels at Ec-0.15 eV in CIS, and Ec-0.39 eV in CGS. We conclude that hydrogen could convert CIS to n type, but not CGS. © 2003 American Institute of Physics.

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Pascal:03-0359667

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<div type="abstract" xml:lang="en">First-principles total-energy calculations for hydrogen impurities in CuInSe
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complex, hydrogen forms shallower centers with transition levels at E
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