Doping of chalcopyrites by hydrogen
Identifieur interne : 00BF97 ( Main/Repository ); précédent : 00BF96; suivant : 00BF98Doping of chalcopyrites by hydrogen
Auteurs : RBID : Pascal:03-0359667Descripteurs français
- Pascal (Inist)
- Wicri :
- concept : Hydrogène.
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Abstract
First-principles total-energy calculations for hydrogen impurities in CuInSe2 (CIS) and CuGaSe2 (CGS) show that H+ takes up the Cu-Se bond center position, whereas H0 and H- take up tetrahedral interstitial site next to In (in CIS) or Ga (in CGS). Hydrogen creates a negative-U center (i.e., H0 is never stable), with a (+/-) transition level at Ec-0.39 eV in CIS, and Ec-0.57 eV in CGS. However, once combined with the 2VCu-+IIICu2+ complex, hydrogen forms shallower centers with transition levels at Ec-0.15 eV in CIS, and Ec-0.39 eV in CGS. We conclude that hydrogen could convert CIS to n type, but not CGS. © 2003 American Institute of Physics.
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<author><name sortKey="Kilic, Cetin" uniqKey="Kilic C">Cetin Kilic</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>National Renewable Energy Laboratory, Golden, Colorado 80401</s1>
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<placeName><region type="state">Colorado</region>
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<wicri:cityArea>National Renewable Energy Laboratory, Golden</wicri:cityArea>
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<author><name sortKey="Zunger, Alex" uniqKey="Zunger A">Alex Zunger</name>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Copper compounds</term>
<term>Doping profiles</term>
<term>Gallium compounds</term>
<term>Hydrogen</term>
<term>Impurity states</term>
<term>Indium compounds</term>
<term>Ternary semiconductors</term>
<term>Theoretical study</term>
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<front><div type="abstract" xml:lang="en">First-principles total-energy calculations for hydrogen impurities in CuInSe<sub>2</sub>
(CIS) and CuGaSe<sub>2</sub>
(CGS) show that H<sup>+</sup>
takes up the Cu-Se bond center position, whereas H<sup>0</sup>
and H<sup>-</sup>
take up tetrahedral interstitial site next to In (in CIS) or Ga (in CGS). Hydrogen creates a negative-U center (i.e., H<sup>0</sup>
is never stable), with a (+/-) transition level at E<sub>c</sub>
-0.39 eV in CIS, and E<sub>c</sub>
-0.57 eV in CGS. However, once combined with the 2V<sub>Cu</sub>
<sup>-</sup>
+III<sub>Cu</sub>
<sup>2+</sup>
complex, hydrogen forms shallower centers with transition levels at E<sub>c</sub>
-0.15 eV in CIS, and E<sub>c</sub>
-0.39 eV in CGS. We conclude that hydrogen could convert CIS to n type, but not CGS. © 2003 American Institute of Physics.</div>
</front>
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<fA11 i1="01" i2="1"><s1>KILIC (Cetin)</s1>
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<fA11 i1="02" i2="1"><s1>ZUNGER (Alex)</s1>
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<fA20><s1>2007-2009</s1>
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<fC01 i1="01" l="ENG"><s0>First-principles total-energy calculations for hydrogen impurities in CuInSe<sub>2</sub>
(CIS) and CuGaSe<sub>2</sub>
(CGS) show that H<sup>+</sup>
takes up the Cu-Se bond center position, whereas H<sup>0</sup>
and H<sup>-</sup>
take up tetrahedral interstitial site next to In (in CIS) or Ga (in CGS). Hydrogen creates a negative-U center (i.e., H<sup>0</sup>
is never stable), with a (+/-) transition level at E<sub>c</sub>
-0.39 eV in CIS, and E<sub>c</sub>
-0.57 eV in CGS. However, once combined with the 2V<sub>Cu</sub>
<sup>-</sup>
+III<sub>Cu</sub>
<sup>2+</sup>
complex, hydrogen forms shallower centers with transition levels at E<sub>c</sub>
-0.15 eV in CIS, and E<sub>c</sub>
-0.39 eV in CGS. We conclude that hydrogen could convert CIS to n type, but not CGS. © 2003 American Institute of Physics.</s0>
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